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| Work Experience: |
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Aug. 2004 - present:@ OHNO & PARTNERS
Jan. 2004 - Aug. 2004: KATAYAMA & Partners
July 2001 - Jan. 2004: TANI & ABE
Aug. 2000 - June 2001: TMI & Associates
Registered as Patent Attorney in December, 2000
Apr. 1984 - May 2000: Research Engineer, Showa Denko K.K.
Major Research Fields: Semiconductors (Silicon, GaAs, GaP, InP, GaN, SiC, ZnSe etc.),
Magnetic Storage Technology, Optics, Material Sciences, Diagnostic Techniques,
and Opt-Electronics (LED, LD etc.).
June 1986 - Jan. 1988: Visiting Scientist of the Electro-Technical Laboratory
(Tsukuba, Japan)
Sep. 1990 - May 1992: Visiting Scientist of North Carolina State University
(Faculty of Engineering, Department of Material Science and Engineering)
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| Education: |
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1993: Doctor of Philosophy (Electronics)
Osaka University (Faculty of Engineering)
1984: Master of Science (Physics)
Tohoku University (Graduate School of Science, Department of Physics)
1982: Bachelor of Science (Physics)
Science University of Tokyo (Faculty of Science, Department of Physics) |
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| Publications: |
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K. Katayama
"Characterization of Oxygen Precipitates in CZ-Silicon Crystals by
Light-Scattering Tomography"
Jpn. J. Appl. Phys. 29 (1990) L198
K. Katayama, Y. Kirino and F. Shimura
"Non-contact Characterization for Energy Level Related to Silicon Wafer Surface"
in "Defects in Silicon II" (Eds. W. M. Bullis, U. Goesele and F. Shimura,
The Electrochemical Society, Pennington, NJ, 1991) pp.89
K. Katayama and F. Shimura
"LM-DLTS Measurements for CZ Silicon Wafers with Different [Oi],
[Cs] and Thermal History"
in "Defects in Silicon II" (Eds. W. M. Bullis, U. Goesele and F. Shimura,
The Electrochemical Society, Pennington, NJ, 1991) pp.97
K. Katayama, Y. Kirino and F. Shimura
"Effects of Ultraviolet Light Irradiation on Non-contact Microwave Lifetime Measurement"
Jpn. J. Appl. Phys. 30B (1991) L1907
J. Partanen, T. Tuomi and K. Katayama
"Comparison of Defect Images and Density Between Synchrotron Section Topography and
Infrared Light Scattering Microscopy in Heat Treated Czochralski Silicon Crystals"
J. Electrochem. Soc. 139 (1992) 599
K. Katayama and F. Shimura
"Non-contact Defect Characterization for CZ Silicon Crystals with FT-IR, LM-Lifetime,
LM-DLTS and Light Scattering Tomography"
in "Diagnostic Techniques for Semiconductor Materials and Devices
(Eds. J. Benton, G. Maracas and P. Rai-Choudhury, The Electrochemical Society,
Pennington, NJ, 1992) pp.184
K. Katayama and F. Shimura
"Non-contact Characterization for Ultraviolet Light Irradiation Effect on Si-SiO2 Interface"
Jpn. J. Appl. Phys. 8A (1992) L1001
A. Buczkowski, K. Katayama, G. A. Rozgonyi and F. Shimura
"Non-contact Mobility Measurement with a Laser/Microwave Photoconductance Technique:
Temperature Dependence"
Appl. Phys. Lett. 60 (1992) 1229
L. Zhong, A. Buczkowski, K. Katayama and F. Shimura
"Transient Recovery of Minority-Carrier Lifetime in Silicon After Ultraviolet Irradiation"
Appl. Phys. Lett. 61 (1992) 931
K. Katayama and F. Shimura
"Non-contact Characterization for Ultraviolet Light Irradiation on Si-SiO2 Interface"
in "Defects Engineering in Semiconductor Growth, Processing and Device Technology"
(Eds. S. Ashok, J. Chevallier, K. Sumino and E. Weber, Materials Research Society,
Pittsburgh, 1992)
K. Katayama, A. Agawal, Z. J. Radzimski and F. Shimura
"Investigation on Defects in CZ Silicon with High-Sensitive Laser/Microwave
Photoconductance Technique"
Jpn. J. Appl. Phys. 32 (1993) 298
K. Katayama and F. Shimura
"Non-contact Characterization for Carrier Recombination Center Related to
Si-SiO2 Interface"
Jpn. J. Appl. Phys. 32 (1993) L395
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| Activities: |
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Apr. 2002 - Mar. 2003 Member of the International Activities Center of JPAA |
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Apr. 2003 - present Member of the Training Institute of JPAA |
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